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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER ANG INCH Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -100 -100 -5 -5 -0.5 UNIT V V V A A W ae ae TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A; VCE=-5V f=1MHz ; VCB=-10V;IE=0 40 20 MIN -100 -2.0 -1.5 -100 -1 240 |I TYP. MAX UNIT V V V A mA SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB O Collector output capacitance Y hFE-1 Classifications R 40-80 HAN INC 70-140 120-240 SEM GE OND IC TOR UC 5 270 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1016 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 SEM GE HAN INC OND IC TOR UC 4 |
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